Ge germanium wafer semiconductor substrates <111> concentrating photovoltaic CPV custom size shapes
Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (e.g., indium, gallium, boron) to obtain P-type germanium semiconductors, and pentavalent elements (e.g., antimony, arsenic, and phosphorus) doped to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility. High-quality germanium substrates can be used in concentrated photovoltaics (CPV), outer space solar panels, and high-brightness light-emitting diode (LED) applications.
Features
- The lattice constant is greater than that of silicon, which is conducive to the construction of heterostructures.
- The high electron mobility, about 3 times that of silicon, is conducive to the manufacture of high-speed electronic devices.
- The small bandgap width (0.67 eV) makes it suitable for infrared photoelectric detection and emission applications.
It is more sensitive to radiation and is suitable for radiation-sensitive electronic equipment.
The processing technology is relatively complex and the cost is high.
Technical Parameters
Applications
1. High-frequency analog and RF electronics: microwave diodes, transistors, integrated circuits; Electronic equipment in the microwave frequency band, such as radar and communications.
2. Infrared photoelectric detection and emission: infrared detector, thermal imager; Infrared emitting diodes, laser diodes.
3. Radiation Sensitive Electronic Equipment: Compound Semiconductor Heterostructure: Aerospace Avionics System; Nuclear power plants and electronic equipment in the military field.
4. Compound semiconductor heterostructure: substrate materials for III-V compounds such as GaAs, InP, etc.; Heterogeneous structure solar cells, laser diodes, etc.
Our services
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
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